CS030E 30-60uA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126K Plastic-Encapsulate Thyristors CS030E Sensitive Gate SCRs MAIN CHARACTERISTICS 2A IT( AV ) VDRM/VRRM 600V IGT 200 μA TO-126K 1.CATHODE 2.ANODE 3.GATE FEATURES  PNPN 4-layer Structure SCRs  Mesa Glass Passivated Technology  Multi Layers Metal Electrodes  Sensitive gate trigger APPLICATIONS MARKING  Pulse Igniter CS030E:Part Number  LED Controller XXX:Internal Code  Coffee Machine ABSOLUTE RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Test condition Value Unit Repetitive peak offstate voltage Tj=25℃ 600 V IT(AV) Average on-state current TO-126K(TC≤80℃) 2 A IT(RMS) RMS on-state current 3 A ITSM Non repetitive surge peak on-state current TO-126K(TC≤80℃)， Fig. 1,2 Full sine wave ，Tj(init)=25℃, tp=20ms; Fig. 3,5 20 A I2t value tp=10ms 2 A2s Critical rate of rise of on-state current IG=2*IGT, tr≤10ns, F=120HZ, Tj=110℃ 50 A/μs Peak gate current tp=20µs, Tj=110℃ 0.2 A PG(AV) Average gate power Tj=110℃ 0.1 W TSTG Storage temperature -40~+150 Operating junction temperature -40 ~+110 VDRM/ VRRM I2t dIT/dt IGM Tj www.jscj-elec.com 1 ℃ Rev. - 1.0 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Test condition Symbol Parameter IGT Gate trigger current VGT Gate trigger voltage VGD Non-triggering gate voltage IH Value Unit Min Nom Max 10 - 200 μA - - 0.8 V VD=1/2VDRM, RGK=1kΩ, Tj=110℃ 0.2 - - V Holding current VD=24V, RGK=1kΩ, ITM=4A, Tj=25℃, Fig. 6 - 1 3 mA IL Latching current IG=1.2IGT, Fig. 6 - - 4 mA dVD/dt Critical rate of rise of off-state VD=67%VDRM, RGK=1kΩ,Tj=110℃ 10 - - V/μs VTM On-state Voltage ITM=4A , Fig. 4 - - 1.5 V Repetitive peak offstate current VD=VDRM/VRRM, Tj=25℃ - - 5 μA VD=VDRM/VRRM,Tj=110℃ - - 100 μA Value Unit IDRM / IRRM VD= 6V, R L =100Ω, RGK =1kΩ Fig. 6 VD=12V, RL =100Ω, RGK =1kΩ THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case (AC) TO-126K 7.2 ℃/W Rth (j-a) Junction to ambient TO-126K 100 ℃/W PART NUMBER CS 030 E Sensitive Gate SCRs IT(RMS)=3A www.jscj-elec.com Package Type 2 Rev. - 1.0 CHARACTERISTICS CURVES FIG.2: RMS on-state current versus case temperature (full cycle) 7 4 I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 6 3 5 4 2 3 2 1 1 0 1 0 2 0 -50 3 I T(RMS) (A) 0 100 Tc ) FIG.4: On-state characteristics (maximum values) I TM (A) I TMS (A) FIG.3: Surge peak on-state current versus number of cycles 50 25 10 Tj=Tjmax 20 1 15 10 Tj=25ºC 0.1 5 0 0 1 10 100 1000 Number of cycles ) 300 I GT,I H,I L(T) / I GT,I H,I L(T=25 I TMS (A) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 100 10 3.0 2.0 1.0 0 3.0 4.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) 2.5 IGT 2.0 1.5 IH&IL 1.0 0.5 1 0.01 www.jscj-elec.com 0.1 1 0.0 -40 10 tp(ms) 3 -20 0 20 40 60 80 120 100 Tj ) Rev. - 1.0 TO-126K http://www.jscj-elec.com/ 4 Rev. - 1.0